Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are a key element for the next generation of high-power and high-frequency electronics. However, the large power density in these devices induces harsh and localized self-heating in their conducting channel which reduces device reliability. This self-heating is more pronounced in GaN-on-Silicon and GaN-on-SOI transistors. Even though these substrates enable wafer scaling, they have lower thermal conductivity than commonly used silicon carbide (SiC), making thermal management harder. This project focuses on researching thermal management in advanced semiconductor devices to find methods that decrease the peak channel temperature of GaN-on-SIlicon and GaN-on-SOI HEMTs to that of GaN-on-SiC HEMT.

I am participating in SuperUROP because I want to gain more experience in advanced semiconductor devices. I have taken nanoelectronics classes and enjoyed learning about the interaction between semiconductor physics and electronic devices. I want to use that knowledge on a long-term research project. I am excited to apply my knowledge and interests to this project.