Vetri S. Vel

Vetri S. Vel

Scholar Title

MIT EECS | Analog Devices Undergraduate Research and Innovation Scholar

Research Title

Multiphysics Simulations for High-Throughput Screening in 2D Material Synthesis




Electrical Engineering and Computer Science

Research Areas
  • Materials Science

Jing Kong


Developing 2D materials by chemical vapor deposition (CVD) through high-throughput screening using real processes is time-consuming and expensive. Computational models can serve as a surrogate for CVD environments, enabling high throughput 2D material synthesis. Multiphysics simulations can capture the relationships between growth conditions, morphology, and material properties. We aim to simulate CVD graphene growth using the open source multiphysics modules developed by the Idaho National Lab, called MOOSE. The model will integrate multiple modules for physical equations, including heat transfer, gas flow, chemical reaction, and phase field. The project has the potential to serve as a framework for studying growth mechanisms and accelerating the development of 2D materials.


I am participating in SuperUROP because of the extra structure that the program provides in presenting my work. I think that my physics and computer science classes like 8.04 and 8.044, and 6.046 have prepared me well for this project. I hope to learn about what physics simulations can do.

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