Nishat Fahmida Protyasha

Nishat Fahmida  Protyasha
MIT EECS | Advanced Micro Devices Undergraduate Research and Innovation Scholar
Advisor: Palacios, Tomas A.
Department: Electrical Engineering and Computer Science
Areas of Research: Devices
Years: 2022-2023
Research Project Title:

High Temperature GaN Device Characterization and Simulation Framework

abstract:Wide band semiconductors such as GaN and III-N are necessary for building electronics suitable for high temperature applications such as deep well oil drilling, hypersonic aircrafts or exploration of Venus. In this project, we develop a robust experimental and modeling framework for the characterization and simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices across a wide range of temperatures ranging from 25°C to 500°C. Multitude of measurement techniques including DC-IV, pulse-IV, C-V, S-parameter measurements will be performed to extract physical device parameters, which then will be analyzed to understand physical parameters limiting device performance at high temperature.

Doing this SuperUROP will help me gain research experience in wide-band semiconductors. In addition, it will help me understand different aspect of device physics which is particularly appealing to me given my strong background in physics.