MIT EECS | Advanced Micro Devices Undergraduate Research and Innovation Scholar
Advisor:
Palacios, Tomas A.
Department:
Electrical Engineering and Computer Science
Years:
2022-2023
Research Project Title:
High Temperature GaN Device Characterization and Simulation Framework
abstract:Wide band semiconductors such as GaN and III-N are necessary for building electronics suitable for high temperature applications such as deep well oil drilling, hypersonic aircrafts or exploration of Venus. In this project, we develop a robust experimental and modeling framework for the characterization and simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) devices across a wide range of temperatures ranging from 25°C to 500°C. Multitude of measurement techniques including DC-IV, pulse-IV, C-V, S-parameter measurements will be performed to extract physical device parameters, which then will be analyzed to understand physical parameters limiting device performance at high temperature.
About:
Doing this SuperUROP will help me gain research experience in wide-band semiconductors. In addition, it will help me understand different aspect of device physics which is particularly appealing to me given my strong background in physics.
