Electronics based on diamond have great potential to surpass the capability of devices designed on wide bandgap semiconducting materials such as SiC and GaN. Although current techniques have proven that it is difficult to fabricate electronic devices that meet the theoretical expectations, diamonds unique properties provide incentive for further research to develop wafer-sized electronics wherever high temperatures or high voltages are necessary. Field Effect Transistors (FETs) and Schottky Barrier Diodes (SBDs) are the most promising active devices. I intend to build and characterize FETs with the goal of demonstrating their operation in the gigahertz range still works.

I worked with Prof Caroline Ross in the department of Materials Science and Engineering at MIT on the characterization of the structural, magnetic and electronic properties of BiFeO3/CoFeO4 samples. Spent this past summer working on solar cells and emitters based on carbon nanotubes that inspired my interest in carbon and carbon-based compounds for electronic applications.