Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) have been shown to possess attractive output power density at high frequency and are capable of record device performance at temperatures as high as 500 deg. C. Compared to traditional silicon devices, GaN HEMTs can improve the reliability of high temperature (HT) electronic systems and enable the deployment of electronics in new aerospace, automotive, and geothermal energy applications. This project aims to characterize and model the HT behavior of GaN HEMTs in order to better predict device characteristics for circuit-level integration. The project will leverage the MIT Virtual Source GaN HEMT compact model, which will be updated to more accurately model HT device behavior for both DC and radio frequency operation.

Through participating in the SuperUROP program, I look forward to continuing my research on semiconductor device modeling and learning more about the physical mechanisms that govern semiconductor device behavior. My previous nanoelectronics coursework and research experience will help to guide me on the technical details of my project, and I hope to learn techniques for effectively communicating my research with others.