Research Project Title:
Exploration of Gallium Nitride (GaN) Transistors' Electrical and Physical Characteristics and their Effects in Wide-Scale Applications
abstract:Gallium Nitride transistors are able to fill an area in which other semiconductors fail due to their superior performance in power and communication settings. However, in order to fully recognize GaN, its properties must be completely characterized. The study of the breakdown mechanisms of the transistors presents an opportunity to improve performance. Another opportunity is to increase the current capability of GaN transistors. For this, device and package-level simulations of the current distribution in GaN transistors will be carried out. Finally, the third direction of the project is to understand how the performance of GaN RF amplifiers impacts the entire systems. It is crucial to understand how the differences in structure, operation, and physics affect the performance of a circuit.
"Through this SuperUROP, I want to gain more knowledge and experience with modern semiconductor technologies and their practical applications in power electronics and within circuits constructed with transistors from traditional silicon technologies. I am eager to apply knowledge from power electronics and semiconductor physics to the project."