Research Project Title:
Gallium Nitride CMOS Technology for Analog and Power ICs
abstract:Gallium-Nitride’s large bandgap makes it a suitable material for creation of high power and high frequency devices. This project entails innovation and novelty across three size scales: device features, whole devices, and circuit-level. Successful innovation within one size scale leads to transferable performance improvements at subsequent levels. Beginning with device features, the project aims to improve the contact resistance of GaN devices—leading to lower losses and higher performance. For individual devices, the project aims to create improved GaN FETs. Finally, at the circuit-level, the project aims to create higher performance circuits as well as make improvements within the reliability and repeatability of the back end of line contacts. Project success would lead to improved performance of various analog and power circuits.
I'm very excited to participate in SuperUROP to gain valuable experience in the research process. It is a great opportunity to utilize my classroom knowledge to help make contributions at the forefront of device knowledge. My project is also a wonderful opportunity to gain a better understanding of and hands-on experience with device fabrication.